Semiconductor device

Abstract

Abstract PURPOSE:To decrease a finger voltage of a semiconductor device by forming a circuit impedance at a regenerating gate and other gate of a semiconductor controlled rectifier, thereby controlling a current and thus increasing the di/dt withstand amount. CONSTITUTION:A thyristor 21 is formed of a main thyristor 22 and an auxiliary unit 23 formed of PNPN junction, and a regenerative gate G2 is so formed on the N type emitter layer of the auxiliary unit 23 as to surround a cathode K. A gate G0 is formed through a di/dt withstand amount remedy circuit impedance r1 on a P type base layer 24, a gate G1 is formed through a finger voltage remedy circuit impedance r2 at a position confronted to the gate G0, and the current of the gate G0 is branched. Thus, the di/dt withstand amount is increased, a breakdown can be prevented and simultaneously the finger voltage is decreased, and when a plurality of gates are connected in parallel, they can be simultaneously turned ON.

Inventors

• 👤 Yoichi Araki
• 👤 Toshio Ogawa
• 👤 Kazuyuki Nakajima

Bibliographic Details