Semiconductor laser

Abstract

Abstract PURPOSE:To attempt to reduce an oscillation threshold value by first forming an active layer having two bent parts on a stepped semiconductor substrate through the intermediary of a semiconductor layer and then carrying out a selective diffusion from a surface laminated with semiconductors of varying electroconductive type toward lower semiconductor layers. CONSTITUTION:An active layer 19 having two bent parts on a stepped T semiconductor substrate 17 through the intermediary of a semiconductor layer 18. On the said layer, a semiconductor layer 20 of one electroconductive type and a semiconductor layer 21 of an opposite electroconductive type are laminated. Then an impurity diffusion region 22 is formed in such manner that it may reach from the surface of the said laminated layer to a semiconductor layer 20 of one electromagnetic type located above the distance between the two bent parts of the active layer 19. Under this constitution, it is possible to reduce a threshold current and therefore, obtain a semiconductor laser capable of improving an external differantial quanttum efficiency.

Inventors

• 👤 Takashi Sugino
• 👤 Masaru Wada
• 👤 Yuichi Shimizu
• 👤 Kunio Ito

Bibliographic Details