Dicing method of semiconductor wafer

Abstract

Abstract PURPOSE:To prevent propagation of a crack caused by bicing by a method wherein steps are formed along a dicing groove of the wafer, or a layer of a different kind of substance is formed on a dicing line. CONSTITUTION:The crack produced on the groove side at dicing the wafer is propagated in the direction rectangular to that of a maximum stress and repressed to make no further progress due to the formations of a step 5 and a notch 6 in the direction of the proceedings. Namely, the crack X starting from the groove 2 advances in the direction rectangular to the groove 2, and due to the situation of a step 4 at a position (a), a stress concentration arises between the positions (a), (b) to change a course of the crack to be directed toward the wafer surface, when the heat of the crack reaches the position (b). Therefore, the step 4 can control the range of the crack produced within the extent of the position, (a). Further, even when the Si substrate of the SiO2 film or the like and a different material 8 are piled, a similar phenomenon occurs to enable the propagation of the crack to be prevented. The extents of the step and notch are selected depending upon a substrate material, different kind of a material to cover, working condition and tools and the like.

Inventors

• 👤 Masayasu Abe
• 👤 Masafumi Miyagawa
• 👤 Toshio Yonezawa
• 👤 Hatsuo Nakamura

Bibliographic Details