Production of element isolation structure for semiconductor device

Abstract

Abstract PURPOSE:To improve the integration level by preventing shrinkage of an element region in the formation of an oxide film for isolating elements. CONSTITUTION:A resist mask 23 is applied on an SiO2 film 22 on a P type Si substrate 21 and the film 22 and the substrate 21 are etched. Then, a B iron injected layer 24 is made. After the removal of the mask, SiO2 25, Si3N4 26, poly Si 27 and SiO2 28 and SiO2 28 are piled one upon another sequentially and a resist mask 29 is applied thereon. An opening is etched through the SiO2 fiLm 28 and after the removal of the mask 29, poly Si 27 is selectively stched away. Then, after the removal of the SiO2 film, poly Si 27' rangement, the formation of the isolation layer 30 prevents infiltration into an element forming region thereby creating an ideal isolation layer at a high integration level.

Inventors

• 👤 Toshiyuki Ishijima

Bibliographic Details