JPS5599740A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Toko Inc
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Filing: 1979-01-25
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Granted: —
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Expires: 1999-01-25
Abstract
Abstract PURPOSE: To miniaturize the device, by changing parasitic diode which has wide jointing area to flyback diode. CONSTITUTION: The parasitic diode D 1 which is formed by jointing of collector area 5 of pnp transistor (Tr) A with epitaxial layer 2, 3 of separating area which forms TrA, and parasitic diode D 2 which is formed by jointing of epitaxial layer 2, 3 with separating layer 10 by which this separating area is formed, and these diodes D 1 and D 2 perform the roll of flyback diode. COPYRIGHT: (C)1980,JPO&Japio
Inventors
- 👤 Michiya Hosono
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-04 09:15
CPC Classifications
—
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