Reactive sputter-etching

Abstract

Abstract PURPOSE: To etch an SiO 2 or PSG film placed in the center of a hole made in a thin polyester plate with a high rate of selection by the use of a C 4 F 8 gas and/or a mixed gas of C 4 F 8 and He. CONSTITUTION: Material 4 to be etched which consists of an Si substrate with an SiO 2 or PSG film formed on the substrate is placed on a flat electrode 3, and a thin polyester plate 6 is provided in such a way that it surrounds the material. When the diameter of the material to be etched is d mm, that of the plate 6 is to be larger than d by 10W40mm, and if the plural number of the materials are simultaneously etched, a gap of wider than 10mm is provided between the adjacent holes. If the hole dimension of the plate 6 is less than the specified, the progress of etching is impeded because a product of polymerization reaction is accumulated on the surface of the material to be etched, and if the dimension is larger than the specified, the effect of improving an etching speed ratio is lowered. If reactive sputter-etching is made using a C 4 F 8 gas or a mixed gas of C 4 F 8 and He, the etching speed ratio reaches 15 or over, and it is thus possible to make a minute process. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Shinpei Iijima
• 👤 Yoshifumi Kawamoto

Bibliographic Details