Forming method of fine resist pattern

Abstract

Abstract PURPOSE:To improve the dry etching resistance, by acid-treating and heating at an arbitrary stage, in the forming method of fine resist pattern using poly(methyl isopropenyl ketone) at the resist. CONSTITUTION:In resist pattern forming by prebaking poly(methyl isopropenyl ketone) spread on a substrate and radiating electron beam, ultraviolet ray, or the like, acid treatment is given in the midst of pattern forming by treating with use of resist solution, developing solution rinsing solution, or the like containing acid (hydrochloric acid, sulfuric acid, phosphoric acid, etc.), or by contacting with acid mist or acid vapor, and heat treatment is given at about 30-200 deg.C for 2-600 seconds to improve the dry etching resistance. Meanwhile, instead of said acids, acid precursor such as carbon tetrabromide and bromoform, or hydrogen donor such as triphenyl methane and cumene may be used.

Inventors

• 👤 Tateo Kitamura
• 👤 Yasuhiro Yoneda
• 👤 Jiro Naito
• 👤 Toshisuke Kitakoji

Bibliographic Details