Mis type semiconductor device

Abstract

Abstract PURPOSE: To accomplish a shorter channel by isolating the drain layer from the gate electrode so that the resistivity of the channel in the isolated portion is made lower than the portion immediately below the gate electrode while higher than the drain layer. CONSTITUTION: A window is etched through an SiO 2 film 21 on a p-type Si 1 to produce n-layers 2 and 3. The film 21 of the channel section is selectively removed to form n + -layers 2 and 3 and an n-layer 10 by a diffusion. Then, a gate oxide film 25 is formed while a p + -type poly Si gate electrode 4 is selectively formed. The electrode 4 is made so smaller than the channel region 10 as to be formed only on the central part of the region 10. n ++ -Type source and drain layers 2 and 3 and n + buffer layers 11 and 12 are produced again by ion implantation. Then, covered with an SiO 2 film 26, an opening is selectively etched for mounting electrodes 7, 8 and 9. With such an arrangement, the drain dielectric strength can be increased and the range of operating voltage is expanded for shorter channel. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Koichi Nishiuchi
• 👤 Hideki Oka

Bibliographic Details