Semiconductor device

Abstract

Abstract PURPOSE: To eliminate thermal striction and defective wiring in the substrate by the structure such that a plurality of MOS transistors are formed on a semiconductor substrate, and further MOS transistors are provided between them and it is used for insulation and separation. CONSTITUTION: Oxide film 2 and polycrystalline Si film 3 are grown on semiconductor substrate 1, and a plurality of laminates consisting of film 2 and layer 3 are retained in specified regions and the rest are removed. Thus MOS element gates are formed. Next, oxide film 4 and polycrystalline Si layer 5 are grown in a laminate over the entire surface, and in a similar manner, laminates consisting of film 4 and layer 5 and of film 4' and layer 5' lying between laminates consisting of film 2 and layer 3 are retained. Thus a plurality of MOS element gates are formed. Subsequently, sandwiching these gates on both sides in substrate 1, drain regions 7 and 10 and source regions 8 and 9 are formed, and the entire surface is covered with oxide film 6. By making openings, the respective regions are fitted with electrodes. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Takeshi Yamano

Bibliographic Details