Gaseous growth method and vertical type gaseous growth device

Abstract

Abstract PURPOSE: To achieve improvement of crystallizing performance and uniformity by utilizing single crystal growth only when growing gas mixing concentration ratio is in a stabilized condition. CONSTITUTION: A base plate 12-holding inner chamber 6 and a liner tube 7 are put into a vertical reacting tube 1 and closed with a cover 8. By setting the inner chamber to No.1 position, the inner chamber is provided with N 2 supply 4, and when single crystal growing gas which flows in the direction of C from an arrow A reached the prescribed concentration ratio, the inner chamber is turned by 180° to No.2 position. The growing gas is exposed to the surface of the base plate 12, which has been heated 11 in the inner chamber 6, and discharged 5. After gaseous growth for a prescribed period of time, the inner chamber is set back to No.1 position, and the inner chamber 6 is filled with N 2 gas to cover the base plate. When gaseous growth of thin layer of Al 2 O 3 single crystal or MgO.Al 2 O 3 single crystal, etc., is allowed on Si single crystal base plate, it is possible to obtain a uniform thin layer of good crystallizing performance by employing this method. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Hideki Yamawaki
• 👤 Hidetoshi Ishiwari

Bibliographic Details