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JPS5577233A Expired / Lapsed JP ⏱️ 0.0 years remaining

Semiconductor device

Assignee: Mitsubishi Electric Corp
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Filing: 1978-12-06
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Granted: —
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Expires: 1998-12-06
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Abstract

Abstract PURPOSE:To improve reliability of a semiconductor device by removing the possibility of malfunction when a semiconductor is held below an operating voltage without resetting an auto clear signal below the operating voltage of the semiconductor device. CONSTITUTION:Depletion type D.MOSFETs Q15 and Q19 and enhancement type MOSFETs Q16-Q18, and Q20 constitute an FF circuit and after this FF circuit is set in a specific state by a phenomenon at the time of power feed, this circuit is forced not to be set until a power voltage decreases below the operating voltage of FET which has been reset temporarily. Further, power supplies VDD and VDD are connected between D.MOSFETs Q11 and Q12, and D.MOSFETs Q13 and Q14, and D.MOSFETs Q21 and Q22 are also connected between power supplies VDD and VSS. An auto clear signal is generated as the state output of the FF circuit, is so constituted that until the power voltage increases above the operating voltage of FET after the power supply is put to work, a reset signal for FF will not be outputted, thereby eliminating the possibility of malfunction when the device is held below it operating voltage.

Inventors

  • 👤 Tsunenori Umeki

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-05 09:30
CPC Classifications
H; H03; H03K; H03K17/00; H03K17/28; H03K17/284

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