Semiconductor device

Abstract

Abstract PURPOSE: To obtain a multi-input gate circuit with a less occupation area per gate circuit by making the driver transistor alone as a multi-layer construction in a gate circuit of a MOS semiconductor device. CONSTITUTION: An n-type drain region 2 and an n-type source region 3 are formed by diffusion on a p-type Si substrate 4 to produce a channel region 5 comprising an n-type inversion layer therebetween. Then, on the channel region, a gate insulating layer 6 having two gate electrodes 1a and 1b buried is provided to make an n channel 2 layer gate transistor. In such a manner, a load transistor 11 and a driver transistor 12 are formed on one substrate and connected in series. The connection point of the transistors is connected to an output terminal while the other ends of the transistors each to the power source terminal 9 and the ground terminal 10. In addition, the first gate or the transistor 12 is connected to the input terminal 7a while the second gate thereof to the input terminal 7b. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Kokichi Sawada
• 👤 Heihachi Matsumoto

Bibliographic Details