Semiconductor device

Abstract

Abstract PURPOSE: To compensate for leakage current of the MOS transistor by feeding a slight current to the drain region from a semiconductor substrate composing a static type MOS memory used for the power supply line. CONSTITUTION: The SiO 2 film 34 is spread over the specified region 32 on the surface of the n - -type Si substrate 21 and used for the mask to form a p - -type region 22. After the removal of the film 34, a thick field SiO 2 film 27 is formed at the end of the region 22. Subsequently, a polycrystaline Si-layer 35 is arranged on the region 32 covering over the film 27 located on the both sides thereof while a polycrystaline Si gate electrode 25 on the region 22 through a thin gate SiO 2 film 27 while a SiO 2 film 36 is formed on the specified region of the layer 35. Thereafter, with the electrode 25 as a mask, an n-type source and the drain regions 23 and 24 are formed by diffusion on the region 22. At the same time, the layer 35 except for under the film 36 is converted into an n-type layers 30 and 31 while an n-type region 33 is formed under the layer 31. In this manner, the region 23 is fed with a slight current from the substrate 21 by way of the layers 33, 31, 29 and 30. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Yoshio Sakai
• 👤 Toshiaki Masuhara
• 👤 Osamu Hata
• 👤 Toshio Sasaki

Bibliographic Details