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JPS5572055A Expired / Lapsed JP ⏱️ 0.0 years remaining

Preparation of semiconductor device

Assignee: NEC Corp
•
Filing: 1978-11-27
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Granted: —
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Expires: 1998-11-27
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Abstract

Abstract PURPOSE: To improve production recovery, by grinding same location on a semiconductor substrate 2 times mechanically so that it can be separated into each individual pellets without causing any crack. CONSTITUTION: A wafer 11 is stuck to a joining tape 12, and it is ground by a cutter 14 from the direction of A' leaving approximately 1/4 of the thickness. Likewise, it is ground from the direction of B' leaving approximately 1/4 of the thickness. At this time, since it is not completely cut off in the direction of A', force of the cutter is dispersed preventing occurrence of cracks in the horizontal direction. And then, it is completely cut off, in the direction of A', at a width I' narrower than a width G of the initial grinding groove 15. And then, like-wise, it is completely separated at a width J' in the direction of B'. At this time, as the second grinding width is norrower than the initial grinding width and the thickness of section to be ground is less than 1/4 of the wafer thickness, the force applied to the bottom of a pellet 16 becomes less than 1/4 of that of the conventional method, and therefore, occurrence of crack is almost prevented. It is possible in this way to improve production recovery of pellet. COPYRIGHT: (C)1980,JPO&Japio

Inventors

  • 👤 Shoichi Fujisada
  • 👤 Kazuya Kuguyama

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-04 18:55
CPC Classifications
—

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