Preparation of semiconductor device

Abstract

Abstract PURPOSE: To obtain an insulation separating layer between elements, by using low temperature and less processing stages. CONSTITUTION: Using a resist mask 4, an Si substrate 1 is provided with an indentation 6 by being plasma-etched in a reacting tube using a mixture gas of CF 4 and O 2 . By conducting plasma CVD, an SiO 2 layer 7 is formed on the resist of the indentation 6. At the time, a surrounding wall of an opening 5 of a mask 4 is to be formed so that is becomes in such a position a being vertical or overhanging toward the substrate 1. After formation of the layer 7, it is converted (or switched) to only O 2 , and treated with ash to remove the resist film 4 together with an SiO 2 film 4, the SiO 2 layer 7 is left in the indentation. And then, the substrate is taken out from the reacting tube, and residual of the resist, etc. is removed. By using this process, the Si substrate is not required to be specially heated, an ordinary photo- resist film can be used, and therefore, an insulation separating layer can be obtained without formation and removal of special mask and with an extensive reduction of processing stages. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Daijiro Kudo

Bibliographic Details