Preparation of semiconductor device

Abstract

Abstract PURPOSE: To provide a semiconductor substrate with a break-free separating layer of insulation material, by forming circumferential edge of a resist pattern into a conversely tapered shape and sputter-etching reactively. CONSTITUTION: When a photo-resist having been exposed to light is immersed in solution of chlorobenzene for development, circumferential edge of a resist pattern 6 is provided with a conversely tapered section. And, when an Si 3 N 4 film 4, an SiO 2 film 3, an epitaxial layer 2 and an Si substrate 1 are reactive-sputter-etched by using CCl 4 gas, etc., an etched groove 7 of tapered shape is obtained with accuracy without depending on crystallized surface. And then, the groove 7's inside surface, with exception of the resist pattern 6, is covered with the SiO 2 film 3' and the groove's inside is filled by a poly-Si film 8 by soldering. The poly-Si on the film 4 outside the groove is removed by grinding, the SiO 2 film 3" is again formed, and when the Si 3 N 4 is eliminated, a separating layer is completed. In this mechanism, an insulating separating layer of a flat surface is obtained on the front surface of a semiconductor substrate of a given crystallized surface so that break of line can be prevented. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Akira Tabata
• 👤 Yunosuke Kawabe
• 👤 Chuichi Takada
• 👤 Ryoji Abe
• 👤 Yoshinobu Monma

Bibliographic Details