Method for pattern formation

Abstract

Abstract PURPOSE: To form a fine pattern by switching a dry etching to a wet etching on the way. CONSTITUTION: An object 3 to be etched, which is holding in a cassette 20, is sent into a room 11 facing up the surface of object 3b on which a patterning is made by a regist film 3c and contacting the base 3a on the conveyor 19, and it is etched first by gas plasma. Further it is sent to a next room 16 in a state of some material 3b being lefted in the around of pattern. After it was cooled, it is etched by etching solution which is sprayed from jet nozzles 18 when it passes the place, and then it is sent to the cassette 21. A fine etching is obtained by this constitution using advantages of dry and wet etchings. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Mitsuru Yamada
• 👤 Yukio Uehara

Bibliographic Details