Manufacture of semiconductor device

Abstract

Abstract PURPOSE: To obtain a bonding stable for its step and preferable in its reproducibility in a semiconductor device by implanting germanium ion onto the back surface of a pellet, depositing a film having mainly gold thereon and then bonding via Au-Si eutectic. CONSTITUTION: Ge + is implanted at 50keVW100keV and higher than 5×10 -15 cm 2 on the surface 6 of a silicon substrate 5 and on the surface 11 to be adhered to the opposite surface thereof to thereby form an implantation region 12. An Au deposited film 13 is formed in several micron further thereon by means of a vacuum depositing process. It is then placed on a metallic header 15 and heated at 450°C, and pressurized then. When the Au-Si alloy starts melting in the boundary between the Au deposited film 13 and the Ge ion implanted region 12, the Ge implanted region is molten into the Au-Si alloy molten region 16. When it is then cooled, a pellet 14 is adhered to the header 15. Thus, a bonding can be stably obtained without deposition of different element alloy of vapor pressure such as Au and Ge. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Kosei Kajiwara
• 👤 Tatsunori Nakajima

Bibliographic Details