Preparation of mos type semiconductor device

Abstract

Abstract PURPOSE: To form gates even on a source and a drain while substantially keeping the advantages of an orginal self-matching method. CONSTITUTION: N + -type poly Si layers 21, 22 are selectively made up on a P-type Si substrate 11, and the thick films 31 and a thin film 31G of SiO 2 are manufactured by means of low temperature oxidation. A source 14 and a drain 15 are produced by diffusion from the N + -layers by means of treatment at high temperatures. An N + -type poly Si gate 13 is prepared. Thus, the source 14, the gate 13 and the drain 15 are arranged by means of a self-matching method, and direct wiring 13' from the gate electrode 13 on the source or the drain, which cannot be executed in a conventional self-matching method, is made possible while the advantages are retained. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Junji Sakurai

Bibliographic Details