Semiconductor device

Abstract

Abstract PURPOSE: To prevent the variation of characteristics and thermal break-down, by uniformalizing that generated in case of operation, and by rapidly diffusing the heat to the outside by mounting a substance layer with great thermal capacity or a substance layer with large thermal conductivity onto a surface of a chip of a semiconductor integrated circuit through a thin insulator layer. CONSTITUTION: A thin insulator layer 21 in silicon oxide, silicon nitride, alumina, polyimide resin, etc. is formed onto a chip 11 of a semiconductor integrated circuit, and a metallic layer 31 in Al, Au, Cu, etc. is made up on the layer 21 so as to cover the whole surface of the chip. Thus, the characteristics of temperature drift are improved in a differential amplification circuit, etc., and local thermal runaway and thermal break-down can also be prevented. If the metallic layer 31 is thermally bonded with a chip substrate directly around the chip, the characteristics can further be bettered. The metallic layer may be connected to another body with great thermal capacity. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Kiyoshi Sakai

Bibliographic Details