Preparation of semiconductor device

Abstract

Abstract PURPOSE: To form an electrode or wiring, by making up a poly Si layer, to which impurities are added, and an Al layer to a semiconductor substrate, and by lowering the resistance of poly Si by irradiating laser rays to the poly Si layer after heat treatment. CONSTITUTION: Field oxide films 12 and a gate oxide film 13 are mounted to a p-type Si substrate 11, and a P added poly Si 14' is selectively built up by means of a resist mask 15. The resist 15 is removed, and As ions are injected and annealed using the film 14' as a mask, thus manufacturing a source 16 and a drain 17. PSG 18 is coated, and a surface of the PSG is reflown by treating it at 1050°C for twenty minutes, thus preparing a smooth surface. Al patterns 19a, 19b are installed by means of a usual photograph etching method and sintered in foaming gas, and laser rays 30 are irradiated to the layer 14' through the layer 18 from the surfaces. Consequently, the resistance of the layer 14' approximately reduces by half, an excellent gate electrode or wiring is obtained, the resistance of the layer 14' also does not increase after irradiation, and the resistance of the layer 14' is controlled by adjusting the output of laser rays, thus acquiring the desired characteristics. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Sunao Shibata

Bibliographic Details