Potassium ion sensor

Abstract

Abstract PURPOSE: To improve water resistance and stabilize the characteristics of K + selective film by covering the film surface of an FET having a gate insulating film with specified organic film. CONSTITUTION: The solution of K + selective ligand such as valinomycin, hard water soluble K salt such as potassium tetraphenyl borate and high polymer compound such as vinyl chloridevinylidene chloride copolymer is coated and dried on the insulation film of the FET sensor which has a gate at one end of a preferably slender Si chip and has a multilayer structure including SiO 2 layer and Si 3 N 4 layer in the insulating film of said gate part, whereby the K + sensitive layer of thicknesses 1000Å to 500μ, preferably 10 to 100μ is formed. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Kiyoo Shimada
• 👤 Makoto Yano
• 👤 Kyoichiro Shibatani

Bibliographic Details