Production of photo mask

Abstract

Abstract PURPOSE:To obtain the photo mask of superior shielding effect with high accuracy by forming the patterns of organic compound on the mask substrate using SiO2 as the layer to be etched then selectively etching the portions right under the patterns by the gas containing HF. CONSTITUTION:After a negative type photoresist film 2 of 0.05-3mum is cated on a mask substrate 1 of quartz glass, it is selectively etched by a photoetching method, whereby the mask substrate 1 having resist patterns 2 is obtained. This is put in a reactor into which HF gas alone or the gas diluted with inert gas (H2, etc.) is introduced at 6Torr, whereby the substrate 1 right under the patterns 2 is selectively etched at ordinary temperature. In 4 minutes, the surface layer parts are etched to depth 2mum and the patterns 2 sink. Next, the patterns 2 are removed, whereby the photo mask 4 having the patterns 3 which are made non-transparent is obtained. It is also possible to obtain the colored mask by carbonizing the patterns 2 through implantation of Argon ion only without removing the patterns 2.

Inventors

• 👤 Hiroshi Takeuchi

Bibliographic Details