Manufacture of semiconductor

Abstract

Abstract PURPOSE: To raise reproducibility within lots or between lots by etching a semiconductor substrate in the vacuum or inactive gas fixed below 10 -2 Torr before cutting down lifetime by diffusing Au or Pt for example in the substrate. CONSTITUTION: Such treatment preliminary to Au diffusion is made of the Si substrate 1 on which P-N junction has been formed, as usually-adopted chemical cleaning, oxide film 2 removal of fluoric acid and fluoric acid removal by water washing. Next, the film 2' is removed etching-removed by inversely spattering in the Ar atmosphere fixed at 10 -3 Torr the substrate 1 having undesirably-formed several 10's-of -100Å SiO 2 film 2'. Thereafter, Au.Si-layer 4 is generated by spattering and sintering Au 3 in the Ar atmosphere fixed at 10 -3 Torr. Au diffusion range 5 is formed by continuing Au diffusion at 850° for 20 minutes for cutting down lifetime. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Tatsuo Miyazaki
• 👤 Masami Nakamura

Bibliographic Details