Semiconductor device

Abstract

Abstract PURPOSE: To provide a semiconductor device which is made to have excellent electrical properties and stability by providing a barrier metal layer having an oxidized surface between a semiconductor substrate and a metallic wiring layer or between the metallic wiring layer and an externally leading electrode protrusion. CONSTITUTION: An electrode contacting hole is provided in an insulation film 2 formed on the surface of a silicon substrate 1. A barrier metal 3 prepared of a metal of high melting point, such as chrome, in the form of powder so as to have a much greater surface area with an oxidized film due to previous exposure to air is evaporated onto an electrode portion in the substrate 1 by the E-gun techniques to form a first metallic layer. A second metallic layer 4 which is used for wiring and composed of aluminum or the like is evaporation-formed over an area covering the barrier metal portion 3 and part of the insulation film 2 as far as the electrode portion, followed by heat treatment, to finally obtain a semiconductor device having a high efficiency and excellent stability. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Kazuhiko Yamamoto
• 👤 Yoshiaki Matsushita

Bibliographic Details