Pattern formation by thick film paste

Abstract

Abstract PURPOSE: To form patterns with openings as small as about 100 micrometers by firstly providing resist patterns on a multi-layer thick film base for LSI's to correspond to the openings, then applying a thick film insulating paste to the thus treated base and finally removing the resists to form the desired patterns. CONSTITUTION: A photosensitive polymeric material 2 having a predetermined thickness is put in contact with a base 1. The photosensitive polymeric material 2 is exposed to light through a prescribed photomask, followed by development with a developing solution, to leave parts of the material 2 corresponding to openings as resists 3. Then an insulating paste 4 is applied over the base 1 in a thickness such that the resists are all covered. Thereupon, the resists 3 are removed together with the paste 4 just overlying each resist. The remaining portions of the paste 4 are dried and burnt to form patterns with openings 5 on the base 1. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Masanori Aoki
• 👤 Tamio Saito
• 👤 Kiyomi Tagaya

Bibliographic Details