Production of semiconductor device

Abstract

Abstract PURPOSE: To obtain a semiconductor device having a excellent characteristics with a simple process by forming partially polycrystal Si film, after a polycrystal Si film is formed selectively using a photo-etching method and then an oxidation film is formed by oxidating the Si film in high temperature vapor atmosphere. CONSTITUTION: The oxidation film 22 is formed on the surface of Si base 21 with a thermal oxidation method, and further the polycrystal Si film 23 is formed on the surface. P or As is diffused into the Si film 23 with a gas phase diffusion method. Then, the film 23 is formed selectively with a ordinary photo-etching method and further, after the oxidation film 24 is formed by oxidation in the vapor atmosphere of about 900°C, the polycrystal Si film 25 is formed. By so doing, the semiconductor device having a excellent characteristics is obtained with this simple process. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Kazuhiko Hashimoto
• 👤 Sunao Shibata

Bibliographic Details