Semiconductor device and its manufacturing

Abstract

Abstract PURPOSE:To discard an element detached territory and improve an integration degree by providing a semiconductor base with a reverse conductive type flush territory, further covering this with an insulating film, forming an opening on the flush territory and preparing here a collector territory of the same conductive type as the flush territory. CONSTITUTION:To provide the P<->-type Si base 1 with the N<+>-type flush territory 2 and to laminate and fix an SiO2 film 3, Si3N4 film 4 and BSG film 5 on the whole surface inclusive of said flush territory and further to form a taper opening 6 positioning it on the territory 2. Next, to make an epitaxial growth of N-type layer on the whole surface and to grow N-type collector single crystal layer 7 inside the opening 6 and a high ratio resistance polycrystal Si layer 8 on the film 5, changing the layer 8 into the P<+>-type layer 8 by diffusing B in the film 5 with heat treatment. Thereafter, to leave the layer 8' only on the outside base territory and remove the rest, further covering this with the SiO2 film 9. Next, to form P-type inside base territory 10 within the layer 7 injecting ion through this film 9, and to cover the whole surface with As dope SiO2 film 11 followed by growing N'-type emitter territory 12 within the territory 10 by heat treatment.

Inventors

• 👤 Kazuyoshi Shinada

Bibliographic Details