Ion taper etching

Abstract

Abstract PURPOSE: To ensure highly reproducible taper etching by providing a process consisting of placing auxiliary layer and mask pattern on etching object film, placing said etching object film on a rotary table, removing said auxiliary layer by applying ion beam from angle θ with the normal of said etching object film, and applying ion beam in the same direction as said normal. CONSTITUTION: Auxiliary layer 3 with thickness d' and photo-resist mask 4 with height h and a rectangular sectional form are made on etching object film with thickness d. When only said auxiliary layer 3 is etched by applying ion beam from angle θ with the normal of said etching object film 2 placed on a rotary table, such a form is given thereto that the portions thereof at the edges of said mask 6 rise and the other are inclined gently. Next, when the etching of said etching object film 2 is made by radiating ion beam in the same direcion as the normal of thereof, the tapering portion of an auxiliary layer 5 is etched so that etching may expand rearward so that a film 7 with taper angle α is obtained. Lastly, remainder films 9 and 8 are removed. Thereby, highly reproducible taper etching is possible. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Hiroshi Gokan
• 👤 Sotaro Edokoro

Bibliographic Details