Semiconductor light receiver-emitter

Abstract

Abstract PURPOSE: To place a p- or n-type In 1-x Ga s As y P 1-y on an n-type InP substrate and further a p,n,p,-type InP thereon for high-brightness light emission. CONSTITUTION: If and ELD of this construction is biassed regularly and light 28 with a wavelength of about 0.8μm is applied on the surface 30 of a p-type InP layer 25, said light passes through an emitter layer 25 and is absorbed when having reached an n-type InP base layer 24 to make an electronic hole couple. A minority carrier diffuses onto a p-type InP corrector layer 23 due to concentration differential and generates corrector current. The photocurrent generated at a base layer at this time requires the supply of said minority carrier from emitter layer. Therefore, the corrector current amplified to 1/(1-α) wherein α is base earthing current amplification factor is generated. Light with a wavelength equivalent to the energy gap of light-emitting layer In 1-x Ga x As y P 1-y 22 is generated by said current. Said light is passed through a transparent substrate 21 and light 29 is taken out through surface 31. Crystal mixation ratios x and y are selected depending on wavelength of light emission, and the grids of said light emitting layer In 1-x Ga x As y P 1-y 22 and substrate 21 are matched with each other. Thereby, light is emitted with high brightness. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Kentarou Onabe

Bibliographic Details