Manufacturing of semiconductor device

Abstract

Abstract PURPOSE: To provide a parting layer in a compound semiconductor device by forming a p-type layer using Al, then by annealing after irradiating a radiation. CONSTITUTION: Two p-layers 12 and 14, and a n-layer 11 are made by diffusing B and P respectively into a n-type Si 13 to compose a SCRA; then a diode B consisting of layers 13 and 14 is inversely connected in parallel. A parting layer C which surrounds the diode B is formed. Two p-layers 121 and 141 in the layer C have Al as an impurity. They become stable isolation layers after an anode 16 and a cathode 15 are added to form an inversely conductive SCR, and an electron beam 17 is irradiated before annealing at 350°C for 400 minutes. A remarkable separation effect is obtained when Al atoms are used in a conductive means for the p-layer in a separation area even in other compound devices. An electron radiation dose of 1×10 13 to 1×10 16 electron/cm 2 is desirable in actual use, if it is less than that, no radiation effect is expected, while if the dose is more than that, forward voltage drop increases. By so doing, a highly accurate parting layer is formed with a good reproducibility. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Toshikatsu Shirasawa
• 👤 Nobutake Konishi
• 👤 Mitsuo Yanagi
• 👤 Naohiro Monma
• 👤 Mitsuru Hirao
• 👤 Masahiro Okamura

Bibliographic Details