Production of semiconductor device

Abstract

Abstract PURPOSE: To increase the attachment strength of an electrode while sufficiently protecting the surface of a substrate by employing a procedure wherein when providing a projected electrode on a semiconductor substrate on which a given set of elements are formed, the whole surface including the projected electrode is covered with a fluorine resin and only the upper surface of the electrode is exposed. CONSTITUTION: The order of the step of forming a projected electrode and the step of coating a fluorine resin film is reversed. An Al wiring 13 is first formed through a SiO 2 film 12 on a semiconductor substrate 11 on which a given set of elements have been provided, and the entire surface is covered with a PSG film 14 by the CVD process. Then an opening is formed at the portion where the projected electrode has been provide and Cr and Cu are continuously vapor-deposited to provide an intermediate metal layer 15. By masking with a photoresist, a Cu electrode 16 is formed by electric plating. Thereafter, the entire surface is covered with a film 17 consisting of a fluorimated ethylene-propylene copolymer, and by providing an opening in an electrode region 16 by the O 2 plasma method, the surface of the electrode 16 is exposed. This permits sufficient protection of the surface of the layer 14, and since the attachment force of the electrode 16 is independent from the film 17, it is strengthened. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Genichi Adachi
• 👤 Nobuki Ibaraki

Bibliographic Details