Manufacturing of mos type transistor

Abstract

Abstract PURPOSE: To provide high pressure-resisting capability by making a source and a drain in such a manner that a part of a semiconductor layer is removed by etching prior to formation of the source and the drain and that impurities are dispersed on thus thinned section. CONSTITUTION: An opening is provided on a surface oxidation film 3 of an n type Si layer 2 on a sapphire base plate 1, and Si layer 2 is etched to provide a hole leaving a fixed thickness (approximately 1 μm). And when a source and a drain are prepared by dispersion of B, length of time required for B to reach the base plate 1 is largely shortened, crystal is not deteriorated and leak current is minimized. A gate oxidation film is newly formed, a poly Si 6 for a gate electrode is provided and, by using this as a mask, B ion is injected into an offset gate section. Further, by covering it with a PSG layer 8 and attaching an Al electrode through a window to be opened selectively, it is turned into a chip. The MOSFET prepared by this method has low ON resistance, exellent frequency characteristics and avalancehe- resisting characteristics and also high pressure-resisting capability. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Toshihide Kuriyama

Bibliographic Details