Semiconductor device

Abstract

Abstract PURPOSE: To increase the reliability of surface protection film, by making the surface protection film of a semiconductor device perform sufficient passivation to alkaline metal ions and at the same time by eliminating current leakage due to hygroscopicity. CONSTITUTION: Diffused element region 2 and SiO 2 film 3 are provided on the main surface of Si base 1. Close to the opening of SiO 2 film of region 2 are provided lower layer Al wiring 4 and layer-insulating AlO 2 O 3 film 5, forming lower wiring. Further, as a layer insulating film, SiO 2 film 6 is provided. To form upper wiring, close to through-hole part 7 is provided a laminated film, consisting of Ti film 8, Pt film 9 and Au film 10. Close to the entire main surface region is given a coating of phosphosilicic acid and phosphosilicic acid has a concentration gradient and the concentration becomes a minimum in the neighborhood of the surface, thus forming surface protection film 12. Here, the phosphosilicic acid concentration gradient has minima at points a and b on curves 100 and 200 within the film. On the extreme surface, it has a minimum close to 0%. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Masaru Nakamura

Bibliographic Details