Insulated gate type semiconductor

Abstract

Abstract PURPOSE: For raising mutual conductance considerably, to generate parasitic transistor effect by interconnecting a MOS type element gate electrode and a semiconductor substrate by means of the resistor having a proper resistance value. CONSTITUTION: N + -type source range 3 and drain range 2 are diffusedly formed on a P-type semiconductor substrate 1, and a gate electrode 5 is fitted on the oxidized gate film 4 provided on the surface of said substrate 1. Next, a source terminal S, a drain terminal D and a terminal G are provided at said range 3 and range 2 and on said electrode 5, and said terminal S is earthed. Further, said electrode 5 and substrate 1 are intentionally interconnected by means of a resistor R, and part of the current of said electrode 5 is let flow into said substrate 1 for making an NPN lateral transistor with said substrate 1 used as base. Thereby, drain current increases due to the induction of current amplification. Thus, this insulated gate type semiconductor shows such a characteristic that element apparently increases in mutual conductance. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Shigeru Watari
• 👤 Eisuke Ichinohe

Bibliographic Details