Semiconductor device

Abstract

Abstract PURPOSE: To protect adhering of insulative material for applying to the side of semiconducter device to the electrode metal by prividing a metal layer on the periphery of the primary main suface and spaced from the-electro metal and in sourrounding manner. CONSTITUTION: After electrode metal 11k is applied to whole primary main suface, metal layer 11s is provided on the periphery of the main surface and spaced from the electrode 11 by photographic etching. An electrode 11a is provided on the other surface and the sideface of the device is coated with Si resin. At this time, Si resin is obstructed and cannot reach to the elctrode 11k, thus failure of the connection by adhering of the insulative material to the lead of the electrode is evaded. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Akinori Ogata

Bibliographic Details