JPS5517152A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Photo mask
Assignee: Fujitsu Ltd
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Filing: 1978-07-25
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Granted: —
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Expires: 1998-07-25
Abstract
Abstract PURPOSE: To obviate the production of pattern defects by depositing a Cr oxide film of oxygne short type on a metal Cr film in place of Cr 2 O 3 film. CONSTITUTION: A metal Cr film 2 is formed on a glass substrate 1 in an inert gas atmosphere. Next, a small amount of O 2 is introduced into the inert gas under accurate control and the film 3 of oxygen short type non-stoichiometric Cr oxide is formed by reaction sputtering preferably by thicknesses of 500 to 1,000Å. This results in decreased reflectance of the photo mask and less undulations at the edge of the photo mask patterns. COPYRIGHT: (C)1980,JPO&Japio
Inventors
- 👤 Kenji Nakagawa
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-04 21:41
CPC Classifications
—
Claims Analysis
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References Cited (Backward Citations)
JPS5325329A
Cited
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