Method of testing semiconductor device

Abstract

Abstract PURPOSE: To carry out the measurements of the subject device exactly and rapidly by a compact device by measuring the characteristic variation factors due to the temperature fluctuation of the semiconductor having a pn-junction by utilizing the temperature characteristic of the forward voltage of the semiconductor device. CONSTITUTION: A forward voltage from a forward voltage drop monitor terminal 10 of pn-junction of an IC in a state where an input voltage is not applied to an input terminal 8 is measured, and the measured value is converted in the terms of temperature to obtain an initial IC chip temperature. Simultaneously, the electric characteristic in this initial temperature is measured. Then, the temperature of the IC chip 2 at the time of the application of the input voltage in a state where an input voltage is applied to an input terminal 8 is monitored, and simultaneously the electric characteristic at the time of applying this input voltage is measured. Furthermore, forcibly the ambient temperature of an IC package is changed, and in this state the electric characteristic is measured. Then, the characteristic variation ratio and thermal resistor are calculated from the electric characteristics at respective temperatures. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Shinji Inoue

Bibliographic Details