Breakdown voltage testing method of insulator

Abstract

Abstract PURPOSE: To make it possible to meter the true value of the breakdown voltage of an insulating film by charging an insulator whit positive or negative charges due to the corona discharge and by metering the charge potential with the use of a surface potentiometer. CONSTITUTION: In case the breakdown voltage of a film 2 of SiO 2 which is formed on a P type semiconductor wafer of Si, the Si wafer 1 formed with the film 2 is placed on a test table and is stored with positive (or negative) charges due to the corona discharge. The charges stored on the insulating film can be manually or automatically measured with the use of a surface potentiometer. Thus, the charge storages are repeated, and the storages are repeated on the film of SiO 2 so that the maximum potential to be stored on the film of SiO 2 becomes the potential value, which can be endured at the most under the condition with no current flowing through the insulating film, i.e., the direct value of the breakdown voltage. COPYRIGHT: (C)1980,JPO&Japio

Inventors

• 👤 Seiichi Iwamatsu

Bibliographic Details