Manufacture of semiconductor device, and silicone resin used therefor

Abstract

Abstract PURPOSE:To reduce reverse leakage current of a semiconductor device by coating the pn junction exposed surface of the device with silicone resin containing an oxidizer, hardening the resin with organic acid metal salt as catalyst and water content as Co-catalyst and then heating it. CONSTITUTION:The pn junction exposed surface of a semiconductor device such as high withstand diode, thyristor or transistor or the like is coated with silicone resin 4 for the device containing oxidizer consisting of organic peroxide such as benzoyl peroxide or the like or inorganic peroxide such as manganese peroxide or the like. Silicone resin is hardened with organic oxide metal salt such as dibutyl tin diacetate or the like as a catalyst and water as a co-catalyst, then continuously or stepwisely raised at temperature from initial temperature of 35-60 deg.C to be heated at a temperature capable of reacting the oxidizer. Thus, it can largely reduce the leakage current of the device.

Inventors

• 👤 Takashi Yokoyama
• 👤 Hiroshi Suzuki

Bibliographic Details