Amending method of photomask

Abstract

Abstract PURPOSE:To facilitate the precision amendment of a defect part in a photomask by a method wherein a white point defect part of a photomask, at that point the pattern is lacked, and its neighborhood are applied with a metallic chelate compound, and heating the defect part only, the metal is deposited. CONSTITUTION:On a white point defect part 4 and its neighborhood of a metallic wiring pattern, which is prepared on the surface of a semiconductor substrate 1, a metallic chelate polymer film 11 such as a metallic chelate of ethyleneimine is formed, and radiating a laser beam or an electron beam to the defect point only, the metallic chelate polymer is heated and decomposed. By this method, the metal is deposited only in the heated part, and forms a metallic film on the substrate 1. Washing it in a solvent and dissolving the undecomposed metallic chelate polymer, a metallic film is retained only on the white point defect part, and the metallic wiring pattern is amended easily and high precisely.

Inventors

• 👤 Mikio Hongo
• 👤 Takeoki Miyauchi
• 👤 Masao Mitani

Bibliographic Details