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JPS55100295A Expired / Lapsed JP ⏱️ 0.0 years remaining

Production of single crystal thin film

Assignee: NTT Inc
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Filing: 1979-01-24
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Granted: —
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Expires: 1999-01-24
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Abstract

Abstract PURPOSE: To form a single crystal thin film of an arbitrary size on a quartz glass substrate, a polycrystal or different crystal substrate or the like by using a single crystal thin layer seed of the same material as a thin film in a microzone melting process. CONSTITUTION: By vacuum deposition, sputtering, a CVD method or other method thin film 2 is formed on substrate 1 made of glassy material such as quartz glass or polycrystal or different crystal material having a m.p. higher than that of a single crystal thin film material to be formed. On film 2 single crystal thin layer 3 of the same material as film 2 is placed and irradiated with laser beams to melt part of layer 3 first. By slowly shifting the molten part film 2 is melted in succession. Thus, a crystal coinciding with the single crystal material is solidification-formed at a peripheral portion of the single crystal portion, and using the crystal as seed a single crystal is similarly solidified in the molten film in succession to obtain a single crystal thin film. COPYRIGHT: (C)1980,JPO&Japio

Inventors

  • 👤 Tatsuo Izawa
  • 👤 Hidefumi Mori
  • 👤 Masao Tachikura

Bibliographic Details

Application Number —
Jurisdiction JP
Data Source google_patents
Last Synchronized 2026-11-06 20:27
CPC Classifications
—

Claims Analysis

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References Cited (Backward Citations)

JPS5225564A Cited
JPS52143755A Cited

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