Semiconductor light switch

Abstract

Abstract PURPOSE: To increase the photo electric conversion efficiency, by making epitaxial growing the N - type Al x Ga 1-x As photo conductive layer having greater diffractive ratio on the N type GaAs substrate and providing the electrode via the stripe projection on the surface. CONSTITUTION: On the N type GaAs substrate 21 in which impurity concentration is 1×10 18 to 5 × 10 18 atoms/cm 3 , the N - type Al x Ga 1-x As thin layer 22(0<x ≤0.2) in which the impurity concentrations is 1×10 13 to 1×10 15 atoms/cm 3 and the diffractive ratio is greater than that of the substrate 21, is epitaxially grown and it is used for the photo conductive layer. Further, the surface is selectively etched and two stripe projections 23a and 23b are formed, having width Wa and Wb, located at the both sides apart from the groove of width Wo at the center, and by coating the electrodes 25a and 25b such as Au and Ag on the surface, the Shottky junctions 24a and 24b are caused. After that, at the back of the substrate 21, the Au-Ge-Ni electrode 26 is attached in ohmic manner. Thus, the effective diffractive rate is changed at bypass application, allowing to increase the efficiency. COPYRIGHT: (C)1979,JPO&Japio

Inventors

• 👤 Hitoshi Kawaguchi

Bibliographic Details