Testing method of semiconductor device

Abstract

Abstract PURPOSE: To enable testing of the upper electrode connection system of a semiconductor device to be performed with good accuracy in a short time by supplying high current pulses of a time width shorter than heat response time for a repetitive time sufficiently longer than the heat response time. CONSTITUTION: Owing to the high current pulses (peak value I 1 M) having beforehand been set at above rated current, the temperature TP of a pellet 2 instantaneously increases considerably and with an increase in the temperatures of the pellet and electrode, shearing stress acts upon the upper and lower electrode connection systems on account of differences in the coefficients of thermal expansion. The upper electrode system becomes higher in temperature than the lower electrode system and the shearing stress on the upper electrode connection system is higher than that on the lower electrode connection system. In the upper electrode system, solder 4 rapidly deteriorates because the considerably high temperature state is repeated. As a result, supplying of the high current pulses of a time width shorter than the heat response time for the repetitive time sufficiently longer than the heat response time enables testing of the upper electrode connection system of the semiconductor device to be performed with good accuracy. COPYRIGHT: (C)1979,JPO&Japio

Inventors

• 👤 Yukito Ikeda
• 👤 Hitoshi Goto

Bibliographic Details