JPS54938A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Mos type memory unit
Assignee: Hitachi Ltd
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Filing: 1977-06-06
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Granted: —
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Expires: 1997-06-06
Abstract
Abstract PURPOSE:To increase the memory signal voltage, by constituting the data line with MOS type constitution, injecting the impurity having the conductivity different from the substrate on the surface of MOS type constitution, and electrically connecting the gate electrode with the impurity layer different from the substrate.
Inventors
- 👤 Hiroo Masuda
- 👤 Yoshiaki Kamigaki
- 👤 Ryoichi Hori
- 👤 Kiyoo Ito
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-24 16:39
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/403; G11C11/404
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