JPS549174A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Method of producing seingle crystal
Assignee: Toshiba Corp
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Filing: 1977-06-24
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Granted: —
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Expires: 1997-06-24
Abstract
Abstract PURPOSE: To allow most of fused matter in a crucible to grow into a high quality single crystal by lowring the effective heating position of a heating device such as high frequency heating relative to a drop in the liquid level thereof. COPYRIGHT: (C)1979,JPO&Japio
Inventors
- 👤 Tsuguo Fukuda
- 👤 Sadao Matsumura
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-26 06:32
CPC Classifications
—
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