JPS548985A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Semiconductor device
Assignee: NEC Corp
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Filing: 1977-06-22
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Granted: —
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Expires: 1997-06-22
Abstract
Abstract PURPOSE: To improve the dielectric strength of a junction by the constitution in which a reversely-conductive region to a semi-conductor substrate as the source region or drain region of a MOS transistor is made several μm or more away from the guard ring layer of the same conductive direction as and higher in impurity density than the substrate and the region is not provided under the gate electrode. COPYRIGHT: (C)1979,JPO&Japio
Inventors
- 👤 Hiroo Wakaumi
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-29 06:53
CPC Classifications
—
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