JPS548971A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Manufacture of semiconductor device
Assignee: NEC Corp
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Filing: 1977-06-22
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Granted: —
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Expires: 1997-06-22
Abstract
Abstract PURPOSE: To work finely impurity-added Si, by etching poly Si using a metal electrode formed on the poly Si as a mask. COPYRIGHT: (C)1979,JPO&Japio
Inventors
- 👤 Akira Sato
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-02 18:08
CPC Classifications
—
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