JPS54885A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Manufacture of field effect transistor
Assignee: NEC Corp
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Filing: 1977-06-03
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Granted: —
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Expires: 1997-06-03
Abstract
Abstract PURPOSE: To increase the dielectric strength as well as the power gain and also to enhance the high frequency properties, by forming the N-type layer on the N t ype semiconductor substrate to provide P-type region there and installing gate insulator film at the center part of the ring-like P-type region after forming P N-type region in the P-type region. COPYRIGHT: (C)1979,JPO&Japio
Inventors
- 👤 Kiyoshi Sakai
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-25 21:55
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/60; H10D30/64; H10D30/66; H10D30/01; H10D30/021; H10D30/028; H10D30/0291; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; H10D62/156; H10D62/157
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