JPS54884A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Manufacture of field effect transistor
Assignee: Fujitsu Ltd
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Filing: 1977-06-03
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Granted: —
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Expires: 1997-06-03
Abstract
Abstract PURPOSE: To obtain a high-speed or high-frequency FET by narrowing the pattern width between the source electrode and the drain electrode which are used to form the gate layer through the metal evaporation given from an oblique direction. COPYRIGHT: (C)1979,JPO&Japio
Inventors
- 👤 Toshio Usui
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-10-30 12:25
CPC Classifications
—
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